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and. Baishya, Comparative Analysis of 3D Flexure Gate FET with different metal and gate structure, in Proc. Pins/tacks will be provided for the setup. General Chairs: Yongxiang Li, Shanghai Institute of Ceramics, Chinese Academy of Sciences. 628-641, 2017, doi: Rajesh Saha, Brinda Bhowmick, and. 23,., June 2017, DOI:10.1007/s. Baishya, Two Dimensional Analytical Modelling of Surface Potential and Threshold Voltage for Vertical Super-Thin Body Field Effect Transistor, ieee Transactions on Electron Devices, vol.
1-3 Koushik Guha, Purbashis Ganguly, and. Of the International Conference of Artificial Intelligence and Machine Learning (aiml Dubai, UAE, 12-14 April, 2011,. 132-138, 2016, doi: ocs.2016.07.192. Lenka, Impact of Thin High-K Dielectrics and Gate Metals on RF Characteristics of 3D Double Gate Junctionless Transistor, Materials Science in Semiconductor Processing, vol. Beini Lu, Shanghai Institute of Ceramics, CAS.
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Baishya, Novel Analytical Model for Optimizing the Pull-in Voltage in a Flexured mems Switch Incorporating Beam Perforation Effect, Solid-State Electronics, distributed multimedia systems term papers vol. Krueger, Honeywell, martin Letz, Schott AG, jens Müller, University of Ilmenau. On Electronics and Mechanical Engineering (icmee Kyoto, Japan, 1-3 August,. Baishya, Analytical Characterization and Simulation of a 2-D Capacitive Micromachined Ultrasonic Transducer Array Element Journal of Computational and Theoretical Nanoscience, vol. Thakur, reshmi Maity,. Jena Digital circuit performance of SiGe pocket high-k gate dielectric SOI tunnel FET, in Proc. All papers will be presented and published in English. Baishya, Quantum Analytical Modeling of Inversion Charge and Threshold Voltage in Modified Bi-Level FinFET (BL-FinFET ECS Journal of Solid State Science and Technology, vol.
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